MJ 2008 - PDF Preprint Papers

MJ 2008

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MJ
2008

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Drive current boosting of n-type tunnel FET with strained SiGe layer at source

13 years 4 months ago

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Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application i...

Nayan Patel, A. Ramesha, Santanu Mahapatra

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Id	Views	Title	Status

1	148	Drive current boosting of n-type tunnel FET with strained SiGe layer at source	claim
2	127	Bottom-up approach to silicon nanoelectronics	claim
3	122	Structural characteristics of carbon nanostructures synthesized by ECR-CVD	claim
4	121	Transport properties of graphene nanoribbon heterostructures	claim
5	117	Efficient implementation of 3X for radix-8 encoding	claim
6	111	CMOL: Second life for silicon	claim
7	98	Prototyping bio-nanorobots using molecular dynamics simulation and virtual reality	claim
8	82	Center embossed diaphragm design guidelines and Fabry-Perot diaphragm fiber optic sensor	claim
9	80	Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model	claim
10	77	Conductance of Armchair GNRs with side-attached organic molecules	claim
11	74	Wigner function and decoherence in a microcavity-Qdot system	claim
12	72	Cell architecture for nanoelectronic design	claim
13	71	A new type of structural defects in CdZnSe/ZnSe heterostructures	claim
14	70	Silicon in functional epitaxial oxides: A new group of nanostructures	claim
15	67	Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits	claim
16	58	Using multi-threshold threshold gates in RTD-based logic design: A case study	claim
17	58	One-dimensional thin-film phonon transport with generation	claim
18	55	Nanostructures, magnetic semiconductors and spintronics	claim
19	55	Electronic properties of nanoribbon junctions	claim
20	54	Mixtures of iron and anatase TiO2 by mechanical alloying	claim
21	52	Low power and high gain current reuse LNA with modified input matching and inter-stage inductors	claim
22	51	Synthesis, characterization and spectroscopy of carbon based nanoscale materials	claim
23	51	Magneto-absorption of donor impurities in quantum-well wires	claim
24	47	Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration	claim
25	44	Vertically coupled quantum dots charged by exciton	claim

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