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MTDT   2006 Design and Testin Memory Technology
Wall of Fame | Most Viewed MTDT-2006 Paper
MTDT
2006
IEEE
154views Hardware» more  MTDT 2006»
8 years 10 months ago
SRAM Cell Current in Low Leakage Design
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby p...
Ding-Ming Kwai, Ching-Hua Hsiao, Chung-Ping Kuo, C...
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