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ISCA
2012
IEEE

RAIDR: Retention-aware intelligent DRAM refresh

11 years 6 months ago
RAIDR: Retention-aware intelligent DRAM refresh
Dynamic random-access memory (DRAM) is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent loss of data. These refresh operations waste energy and degrade system performance by interfering with memory accesses. The negative effects of DRAM refresh increase as DRAM device capacity increases. Existing DRAM devices refresh all cells at a rate determined by the leakiest cell in the device. However, most DRAM cells can retain data for significantly longer. Therefore, many of these refreshes are unnecessary. In this paper, we propose RAIDR (Retention-Aware Intelligent DRAM Refresh), a low-cost mechanism that can identify and skip unnecessary refreshes using knowledge of cell retention times. Our key idea is to group DRAM rows into retention time bins and apply a different refresh rate to each bin. As a result, rows containing leaky cells are refreshed as frequently as normal, while most rows are refreshed less frequently. RAIDR uses Bloom ...
Jamie Liu, Ben Jaiyen, Richard Veras, Onur Mutlu
Added 28 Sep 2012
Updated 28 Sep 2012
Type Journal
Year 2012
Where ISCA
Authors Jamie Liu, Ben Jaiyen, Richard Veras, Onur Mutlu
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