An active leakage-injection scheme applied to low-voltage SRAMs

ABSTRACT: An active leakage-injection scheme (ALIS) for lowvoltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a commondrain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of µA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256x1bit array was designed in

• Type: Conference
• Year: 2003
• Where: ISCAS
• Authors: Jader A. De Lima
• Keywords: Active Leakage-injection Scheme, ISCAS 2003, Respective Bit-line Leakage, Simplified 256x1bit Array