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DAC
2008
ACM

Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube F

9 years 3 months ago
Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube F
Intrinsic and parasitic capacitances play an important role in determining the high?frequency RF performance of devices. Recently, a new type of carbon nanotube field effect transistor (CNFET) based on tunneling principle has been proposed, which shows impressive device properties and overcomes some of the limitations of previously proposed CNFET devices. Although carbon nanotube based devices have been optimized for DC performance so far, little has been done to optimize them for high-frequency operation. In this paper, we present, detailed modeling and analysis of device geometry based intrinsic and parasitic capacitances of tunneling carbon nanotube field effect transistors (T-CNFETs) with both single nanotube as well as nanotube-array based channel. Based on the model, we analyze scaling of parasitic capacitances with device geometry for two different scaling scenarios of T-CNFETs. We show that in order to reduce the impact of parasitic capacitance, nanotube density has to be opti...
Chaitanya Kshirsagar, Mohamed N. El-Zeftawi, Kaust
Added 12 Nov 2009
Updated 12 Nov 2009
Type Conference
Year 2008
Where DAC
Authors Chaitanya Kshirsagar, Mohamed N. El-Zeftawi, Kaustav Banerjee
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