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2010
IEEE

Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes

9 years 29 days ago
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes
ÑIn this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analyze industrial designs of SRAM core-cell at the following technology nodes: 90nm, 65nm and 40nm. We have performed an extensive number of simulations, varying the resistive value of defects, the power supply voltage, the memory size and the temperature. Experimental results show malfunctions not only within the defective core-cell, but also in other core-cells (defect-free) of the memory array. KeywordsÑSRAM, core-cell, resistive-bridge, fault modeling.
Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio,
Added 25 Jan 2011
Updated 25 Jan 2011
Type Journal
Year 2010
Where ETS
Authors Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine
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