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ISCAS
2007
IEEE

A Circuit-Based Noise Parameter Extraction Technique for MOSFETs

9 years 5 months ago
A Circuit-Based Noise Parameter Extraction Technique for MOSFETs
Experimental verification of noise models is one of the major challenges in noise modeling. A circuit-based noise characterization technique is introduced which uses phase noise measurement data to extract MOSFET noise parameters. After a brief discussion on MOSFET noise, experimental data is presented on the severity of excess noise in a 0.18 µm CMOS process using the proposed technique. It is shown that in this process, the noise power of minimum-channel-length devices is up to 6 dB larger than that of long-channel devices. The proposed technique can be used for model verification as well as for parameter extraction in developing CMOS processes.
Reza Navid, Thomas H. Lee, Robert W. Dutton
Added 04 Jun 2010
Updated 04 Jun 2010
Type Conference
Year 2007
Where ISCAS
Authors Reza Navid, Thomas H. Lee, Robert W. Dutton
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