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2016

Codes for Partially Stuck-At Memory Cells

4 years 2 months ago
Codes for Partially Stuck-At Memory Cells
—This paper studies a new model of stuck-at memory cells which is motivated by the defect model of multi-level cells in non-volatile memories such as flash memories and phase change memories. If a cell can store the levels 0, 1, . . . , q − 1, we say that it is partially stuck-at s if it can only store values which are
Antonia Wachter-Zeh, Eitan Yaakobi
Added 11 Apr 2016
Updated 11 Apr 2016
Type Journal
Year 2016
Where TIT
Authors Antonia Wachter-Zeh, Eitan Yaakobi
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