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3DIC
2009
IEEE

Compact modelling of Through-Silicon Vias (TSVs) in three-dimensional (3-D) integrated circuits

10 years 10 days ago
Compact modelling of Through-Silicon Vias (TSVs) in three-dimensional (3-D) integrated circuits
Abstract—Modeling parasitic parameters of Through-SiliconVia (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circuits and interconnections in three-dimensional (3-D) Integrated Circuits (ICs). This paper presents a complete set of self-consistent equations including self and coupling terms for resistance, capacitance and inductance of various TSV structures. Further, a reducedorder electrical circuit model is proposed for isolated TSVs as well as bundled structures for delay and SI analysis, and extracted TSV parasitics are employed in Spectre simulations for performance evaluations. Critical issues in the performance modeling for design space exploration of 3-D ICs such as crosstalk induced switching pattern dependent delay variation and cross-talk on noise are discussed. The error in these metrics when using the proposed models as compared to a field solver is contained to a few percentage points.
Roshan Weerasekera, Matt Grange, Dinesh Pamunuwa,
Added 18 May 2010
Updated 18 May 2010
Type Conference
Year 2009
Where 3DIC
Authors Roshan Weerasekera, Matt Grange, Dinesh Pamunuwa, Hannu Tenhunen, Li-Rong Zheng
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