Copper Electrodeposition for 3D Integration

8 years 10 months ago
Copper Electrodeposition for 3D Integration
Abstract-Two dimensional (2D) integration has been the traditional approach for IC integration. Increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, resulting in a general trend of transition from 2D to 3D integration in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene interconnects, it was be...
Rozalia Beica, Charles Sharbono, Tom Ritzdorf
Added 09 Dec 2010
Updated 09 Dec 2010
Type Journal
Year 2008
Where CORR
Authors Rozalia Beica, Charles Sharbono, Tom Ritzdorf
Comments (0)