Design of RF CMOS low noise amplifiers using a current based MOSFET model

This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current–based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET’s inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown. Categories and Subject Descriptors B.7.1 [ASIC]: Circuit design and simulation, RF integrated circuits, low noise amplifiers. General Terms Theory, design. Keywords CMOS, RF, LNA, noise.

• Type: Conference
• Year: 2004
• Where: SBCCI
• Authors: Virgínia Helena Varotto Baroncini, Oscar da Costa Gouveia-Filho
• Keywords: CMOS Low Noise, Low Noise Amplifiers, MOSFET’s Inversion Regions, SBCCI 2004