Empirical evaluation of NAND flash memory performance

13 years 2 months ago

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Reports of NAND ﬂash device testing in the literature have for the most part been limited to examination of circuit-level parameters on raw ﬂash chips or prototypes, and systemlevel parameters on entire storage subsystems. However, there has been little examination of system-level parameters of raw devices, such as mean latency and endurance values. We report the results of such tests on a variety of devices. Read, program, and erase latency were found to align closely with manufacturer’s speciﬁed “typical” values in almost all cases. Program/erase endurance, however, was found to exceed speciﬁed minimum values, often by as much as a factor of 100. In addition signiﬁcant performance changes were found with wear. These changes may be used to track wear, and in addition have signiﬁcant implications for system performance over the lifespan of a device. Finally, random write patterns which incur performance penalties on current ﬂashbased memory systems were found to in...

Peter Desnoyers

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