Evaluation of design for reliability techniques in embedded flash memories

Non-volatile Flash memories are becoming more and more popular in Systems-on-Chip (SoC). Embedded Flash (eFlash) memories are based on the well-known floatinggate transistor concept. The reliability of such type of technology is a growing up issue for embedded systems; endurance and retention are of course the main features to analyze. To enhance memory reliability current eFlash memories designs use techniques such as Error Correction Code (ECC), Redundancy or Threshold Voltage (VT) Analysis. In this paper, a memory model to evaluate the reliability of eFlash memory arrays under distinct enhancement schemes is developed.

• Type: Conference
• Year: 2007
• Where: DATE
• Authors: Benoît Godard, Jean Michel Daga, Lionel Torres, Gilles Sassatelli
• Keywords: DATE 2007, Hardware, Non-volatile Flash Memories, Reliability Current EFlash, Well-known Floatinggate Transistor