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SIAMAM
2000

Extended Hydrodynamical Model of Carrier Transport in Semiconductors

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Extended Hydrodynamical Model of Carrier Transport in Semiconductors
Abstract. A hydrodynamical model based on the theory of extended thermodynamics is presented for carrier transport in semiconductors. Closure relations for fluxes are obtained by employing the maximum entropy principle. The production terms are modeled by fitting the Monte Carlo data for homogeneously doped semiconductors. The mathematical properties of the model are studied. A suitable numerical method, which is a generalization of the Nessyahu
Angelo Marcello Anile, Giovanni Russo, Vittorio Ro
Added 19 Dec 2010
Updated 19 Dec 2010
Type Journal
Year 2000
Where SIAMAM
Authors Angelo Marcello Anile, Giovanni Russo, Vittorio Romano
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