Gate sizing: finFETs vs 32nm bulk MOSFETs

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Gate sizing: finFETs vs 32nm bulk MOSFETs
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive current. We investigate in this paper gate sizing of finFET devices, and we provide a comparison with 32nm bulk CMOS. Wider finFET devices are built utilizing multiple parallel fins between the source and drain. Independent gating of the finFET's double gates allows significant reduction in leakage current. We perform temperature-aware circuit optimization by modeling delay using temperature-dependent parameters, and by imposing constraints that limit the maximum allowable number of parallel fins. We show that finFET circuits are superior in performance and produce less static power when compared to 32nm circuits. Categories and Subject Descriptors: B.7.1 [Integrated Circuits]: Types and Design Styles General Terms: Design
Brian Swahn, Soha Hassoun
Added 13 Nov 2009
Updated 13 Nov 2009
Type Conference
Year 2006
Where DAC
Authors Brian Swahn, Soha Hassoun
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