Highly Linear Bipolar Transconductor For Broadband High-Frequency Applications with Improved Input Voltage Swing

—An all n-p-n highly linear wide-bandwidth bipolar transconductor (Gm) stage is presented based on a variation of Caprio’s Quad. The high-frequency (HF) linearity of the improved Gm cell is examined by a Volterra analysis. The improved Gm cell has a higher input voltage swing range than other approaches.

• Type: Conference
• Year: 2007
• Where: ISCAS
• Authors: Hsuan-Yu Marcus Pan, Lawrence E. Larson
• Keywords: Improved Gm Cell, ISCAS 2007, Volterra Analysis, Wide-bandwidth Bipolar Transconductor