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ICCAD
2006
IEEE

Leakage power dependent temperature estimation to predict thermal runaway in FinFET circuits

14 years 16 days ago
Leakage power dependent temperature estimation to predict thermal runaway in FinFET circuits
In this work we propose a methodology to self-consistently solve leakage power with temperature to predict thermal runaway. We target 28nm FinFET based circuits as they are more prone to thermal runaway compared to bulk-MOSFETs. We generate thermal models for logic cells to self-consistently determine the temperature map of a circuit block. Our proposed condition for thermal runaway shows the design trade off between the primary input (PI) activity of a circuit block, sub-threshold leakage at the room temperature and the thermal resistance of the package. We show that in FinFET circuits, thermal runaway can occur at the ITRS specified sub-threshold leakage (150nA/mm, highperformance) for a nominal PI activity of 0.5 and typical package thermal resistance.
Jung Hwan Choi, Aditya Bansal, Mesut Meterelliyoz,
Added 16 Mar 2010
Updated 16 Mar 2010
Type Conference
Year 2006
Where ICCAD
Authors Jung Hwan Choi, Aditya Bansal, Mesut Meterelliyoz, Jayathi Murthy, Kaushik Roy
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