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ISCAS
2005
IEEE

Modeling of MOS transistors based on genetic algorithm and simulated annealing

11 years 7 months ago
Modeling of MOS transistors based on genetic algorithm and simulated annealing
— A novel method to extract the efficient model for Metal-Oxide-Semiconductor (MOS) transistors in order to satisfy a specific accuracy is presented. The approach presented here utilizes a Genetic Algorithm (GA) to choose the necessary physical and heuristic elements in order to define a compact yet accurate model for MOS I-V characteristic. Then the values of the free parameters related to each element are determined using Simulated Annealing (SA). For a desired accuracy considered here, the accuracy of the results predicted
Mohammad Taherzadeh-Sani, Ali Abbasian, Behnam Ame
Added 25 Jun 2010
Updated 25 Jun 2010
Type Conference
Year 2005
Where ISCAS
Authors Mohammad Taherzadeh-Sani, Ali Abbasian, Behnam Amelifard, Ali Afzali-Kusha
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