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ISQED
2008
IEEE

Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation

11 years 8 months ago
Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation
Negative bias temperature instability (NBTI) is one of the primary limiters of reliability lifetime in nano-scale integrated circuits. NBTI manifests itself in a gradual increase in the magnitude of PMOS threshold voltage, resulting in the degradation of circuit performance over time. NBTI is highly sensitive to operating temperature, making the amount of degradation strongly dependent on the thermal history of the chip. In order to accurately predict the amount of threshold voltage increase, the precise temperature profile must be utilized. The existing models are based on the simplified analysis which assumes that the temperature takes up to two possible fixed values over time. These models are inaccurate when predicting the impact of continuously-changing temperature that spans a large range. Our experiments show that proposed model accounting for temperature variation provides a significantly tighter bound for the simulation than that from the model that ignores the temperature va...
Bin Zhang, Michael Orshansky
Added 31 May 2010
Updated 31 May 2010
Type Conference
Year 2008
Where ISQED
Authors Bin Zhang, Michael Orshansky
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