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2010

Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations

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Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations
A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.
Alexander Makarov, Viktor Sverdlov, Siegfried Selb
Added 14 Feb 2011
Updated 14 Feb 2011
Type Journal
Year 2010
Where NMA
Authors Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
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