Sciweavers

ASPDAC
2001
ACM

New graph bipartizations for double-exposure, bright field alternating phase-shift mask layout

13 years 8 months ago
New graph bipartizations for double-exposure, bright field alternating phase-shift mask layout
Abstract-- We describe new graph bipartization algorithms for layout modification and phase assignment of bright-field alternating phaseshifting masks (AltPSM) [25]. The problem of layout modification for phase-assignability reduces to the problem of making a certain layoutderived graph bipartite (i.e., 2-colorable). Previous work [3] solves bipartization optimally for the dark field alternating PSM regime. Only one degree of freedom is allowed (and relevant) for such a bipartization: edge deletion, which corresponds to increasing the spacing between features in order to remove phase conflict. Unfortunately, dark-field PSM is used only for contact layers, due to limitations of negative photoresists. Poly and metal layers are actually created using positive photoresists and bright-field masks. In this paper, we define a new graph bipartization formulation that pertains to the more technologically relevant bright-field regime. Previous work [3] does not apply to this regime. This formula...
Andrew B. Kahng, Shailesh Vaya, Alexander Zelikovs
Added 23 Aug 2010
Updated 23 Aug 2010
Type Conference
Year 2001
Where ASPDAC
Authors Andrew B. Kahng, Shailesh Vaya, Alexander Zelikovsky
Comments (0)