A Non Quasi-static Small Signal Model for Long Channel Symmetric DG MOSFET

—We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET. The model is based on the EKV formalism and is valid in all regions of operation and thus suitable for RF circuit design. Proposed model is verified with professional numerical device simulator and excellent agreement is found well beyond the cut-off frequency.

• Type: Conference
• Year: 2010
• Where: VLSID
• Authors: Sudipta Sarkar, Ananda S. Roy, Santanu Mahapatra
• Keywords: Compact Model, Double Gate Mosfet, Signal Non Quasi, VLSI, VLSID 2010