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MCS
2008
Springer

Numerical study of quantum transport in carbon nanotube transistors

8 years 2 months ago
Numerical study of quantum transport in carbon nanotube transistors
A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green's function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron
Mahdi Pourfath, Hans Kosina, Siegfried Selberherr
Added 13 Dec 2010
Updated 13 Dec 2010
Type Journal
Year 2008
Where MCS
Authors Mahdi Pourfath, Hans Kosina, Siegfried Selberherr
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