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DAC
2006
ACM

Process variation aware OPC with variational lithography modeling

10 years 1 months ago
Process variation aware OPC with variational lithography modeling
Optical proximity correction (OPC) is one of the most widely used resolution enhancement techniques (RET) in nanometer designs to improve subwavelength printability. Conventional model-based OPC assumes nominal process parameters without considering process variations, due to prohibitive runtimes of lithography simulations across process windows. This is the first paper to propose a true process-variation aware OPC (PV-OPC) framework. It is enabled by the variational lithography modeling and guided by the variational edge placement error (V-EPE) metrics. Due to the analytical nature of our models, our PV-OPC is only about 2-3? slower than the conventional OPC, but it explicitly considers the two main sources of process variations (dosage and focus) during OPC. Thus our post PV-OPC results are much more robust than the conventional OPC ones, in terms of both geometric printability and electrical characterization under process variations. Categories and Subject Descriptors B.7.2 [Hardwa...
Peng Yu, Sean X. Shi, David Z. Pan
Added 13 Nov 2009
Updated 13 Nov 2009
Type Conference
Year 2006
Where DAC
Authors Peng Yu, Sean X. Shi, David Z. Pan
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