Technological Exploration of RRAM Crossbar Array for Matrix-Vector Multiplication

Matrix-vector multiplication is the key operation for many computationally intensive algorithms. The emerging metal oxide resistive switching random access memory (RRAM) device and RRAM crossbar array have demonstrated a promising hardware realization of the analog matrix-vector multiplication with ultra-high energy efficiency. In this paper, we analyze the impact of both device level and circuit level non-ideal factors, including the nonlinear current-voltage relationship of RRAM devices, the variation of device fabrication and write operation, and the interconnect resistance as well as other crossbar array parameters. On top of that, we propose a technological exploration flow for device parameter configuration to overcome the impact of non-ideal factors and achieve a better trade-off among performance, energy, and reliability for each specific application. Our simulation results of a support vector machine (SVM) and Mixed National Institute of Standards and Technology (MNIST) pa...

• Type: Journal
• Year: 2016
• Where: JCST
• Authors: Lixue Xia, Peng Gu, Boxun Li, Tianqi Tang, Xiling Yin, Wenqin Huangfu, Shimeng Yu, Yu Cao, Yu Wang, Huazhong Yang
• Keywords: JCST 2016