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» A step by step methodology to analyze the IGBT failure mecha...
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MR
2007
96views Robotics» more  MR 2007»
13 years 4 months ago
A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme oper...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
MR
2006
92views Robotics» more  MR 2006»
13 years 5 months ago
Failure mechanism of trench IGBT under short-circuit after turn-off
Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of ev...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...