A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme oper...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of ev...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...