22 search results - page 1 / 5 » A unified MOSFET channel charge model for device modeling in... |
TCAD
1998
13 years 4 months ago
1998
ISCAS
2005
IEEE
13 years 10 months ago
2005
IEEE
— A new operation mode using a partially depleted hybrid lateral BJT-CMOS inverter on SOI, named as a new unified-BiCMOS (U-BiCMOS) inverter, is proposed. The scheme utilizes the...
VLSID
2010
IEEE
13 years 8 months ago
2010
IEEE
—We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET. The model is based on the EKV formalism and is valid in all r...
VLSID
2002
IEEE
14 years 4 months ago
2002
IEEE
Predictive delay analysis is presented for a representative CMOS inverter with submicron device size using PREDICTMOS MOSFET model. As against SPICE, which adopts a time consuming...
ISCAS
2002
IEEE
13 years 9 months ago
2002
IEEE
A unified, closed form analytical drain current model for partially and fully depleted SOS MOSFETs was investigated. The analytical model was developed using first order principle...