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VLSID
2005
IEEE
14 years 4 months ago
2005
IEEE
An accurate and efficient stacking effect macro-model for leakage power in sub-100nm circuits is presented in this paper. Leakage power, including subthreshold leakage power and ga...
DATE
2005
IEEE
13 years 10 months ago
2005
IEEE
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...