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NANONET
2009
Springer
201views Chemistry» more  NANONET 2009»
13 years 11 months ago
Can SG-FET Replace FET in Sleep Mode Circuits?
The Suspended Gate Field Effect Transistor (SG-FET) appears to have the potential to replace traditional FETs in sleep mode circuits, due to its abrupt switching enabled by electro...
Marius Enachescu, Sorin Cotofana, Arjan J. van Gen...
DAC
2005
ACM
14 years 5 months ago
Enhanced leakage reduction Technique by gate replacement
Input vector control (IVC) technique utilizes the stack effect in CMOS circuit to apply the minimum leakage vector (MLV) to the circuit at the sleep mode to reduce leakage. Additi...
Lin Yuan, Gang Qu