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TIT
2010
103views Education» more  TIT 2010»
12 years 11 months ago
Codes in permutations and error correction for rank modulation
Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representi...
Alexander Barg, Arya Mazumdar
ISCAS
2006
IEEE
140views Hardware» more  ISCAS 2006»
13 years 10 months ago
Multilevel flash memory on-chip error correction based on trellis coded modulation
This paper presents a multilevel (ML) Flash memory onchip error correction system design based on the concept of trellis coded modulation (TCM). This is motivated by the non-trivi...
Fei Sun, Siddharth Devarajan, Kenneth Rose, Tong Z...
TIT
2010
170views Education» more  TIT 2010»
12 years 11 months ago
Correcting charge-constrained errors in the rank-modulation scheme
We investigate error-correcting codes for a the rank-modulation scheme with an application to flash memory devices. In this scheme, a set of n cells stores information in the permu...
Anxiao Jiang, Moshe Schwartz, Jehoshua Bruck
TIT
2010
90views Education» more  TIT 2010»
12 years 11 months ago
Correcting limited-magnitude errors in the rank-modulation scheme
We study error-correcting codes for permutations under the infinity norm, motivated the rank-modulation scheme for flash memories. In this scheme, a set of n flash cells are combin...
Itzhak Tamo, Moshe Schwartz
CORR
2010
Springer
135views Education» more  CORR 2010»
13 years 4 months ago
Constant-Weight Gray Codes for Local Rank Modulation
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rankmodulation, ...
Moshe Schwartz