Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magnetoresistive RAM) has characteristics of both non-volatile storage and random ac...
In Hwan Doh, Jongmoo Choi, Donghee Lee, Sam H. Noh
Even though its advantages such as non-volatility, fast write access time and solid-state shock resistance, NAND flash memory suffers from out-place-update, limited erase cycles, a...
Song-Hwa Park, Tae-Hoon Kim, Tae-Hoon Lee, Ki-Dong...
Flash memory has many merits such as light weight, shock resistance, and low power consumption, but also has limitations like the erase-before-write property. To overcome such lim...
Jongmin Lee, Sunghoon Kim, Hunki Kwon, Choulseung ...
Abstract. In this work, we develop novel file system, FRASH, for byteaddressable NVRAM (FRAM[1]) and NAND Flash device. Byte addressable NVRAM and NAND Flash is typified by the DRA...
Eun-ki Kim, Hyungjong Shin, Byung-gil Jeon, Seokhe...