2 search results - page 1 / 1 » ESD protection circuits with novel MOS-bounded diode structu... |
ISCAS
2002
IEEE
13 years 9 months ago
2002
IEEE
On-chip ESD protection circuits realized with novel diode structures without the field-oxide boundary across the p/n junction are proposed. A PMOS (NMOS) is especially inserted in...
MJ
2006
13 years 4 months ago
2006
As technology feature size is reduced, ESD becomes the dominant failure mode due to lower gate oxide breakdown voltage. In this paper, the effectiveness of new gate and substrate ...