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ISQED
2008
IEEE
120views Hardware» more  ISQED 2008»
13 years 10 months ago
Error-Tolerant SRAM Design for Ultra-Low Power Standby Operation
We present an error-tolerant SRAM design optimized for ultra-low standby power. Using SRAM cell optimization techniques, the maximum data retention voltage (DRV) of a 90nm 26kb SR...
Huifang Qin, Animesh Kumar, Kannan Ramchandran, Ja...
ISLPED
2009
ACM
132views Hardware» more  ISLPED 2009»
13 years 10 months ago
Enabling ultra low voltage system operation by tolerating on-chip cache failures
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...
Amin Ansari, Shuguang Feng, Shantanu Gupta, Scott ...
JCP
2008
232views more  JCP 2008»
13 years 3 months ago
Low Power SRAM with Boost Driver Generating Pulsed Word Line Voltage for Sub-1V Operation
Instability of SRAM memory cells derived from the process variation and lowered supply voltage has recently been posing significant design challenges for low power SoCs. This paper...
Masaaki Iijima, Kayoko Seto, Masahiro Numa, Akira ...
VLSID
2006
IEEE
169views VLSI» more  VLSID 2006»
13 years 9 months ago
A Low Leakage and SNM Free SRAM Cell Design in Deep Sub Micron CMOS Technology
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
Sanjeev K. Jain, Pankaj Agarwal
DAC
2002
ACM
14 years 4 months ago
DRG-cache: a data retention gated-ground cache for low power
In this paper we propose a novel integrated circuit and architectural level technique to reduce leakage power consumption in high performance cache memories using single Vt (trans...
Amit Agarwal, Hai Li, Kaushik Roy