Sciweavers

3 search results - page 1 / 1
» Failure mechanism of trench IGBT under short-circuit after t...
Sort
View
MR
2006
92views Robotics» more  MR 2006»
13 years 5 months ago
Failure mechanism of trench IGBT under short-circuit after turn-off
Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of ev...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
MR
2007
144views Robotics» more  MR 2007»
13 years 4 months ago
Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions
Two extreme configurations under short circuit conditions leading to the punch through Trench IGBT failure under the effect of the temperature and the gate resistance have been st...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...
MR
2007
96views Robotics» more  MR 2007»
13 years 4 months ago
A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D
A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme oper...
A. Benmansour, Stephane Azzopardi, J. C. Martin, E...