56 search results - page 1 / 12 » FinFETs for nanoscale CMOS digital integrated circuits |
ICCAD
2005
IEEE
13 years 10 months ago
2005
IEEE
Suppression of leakage current and reduction in device-todevice variability will be key challenges for sub-45nm CMOS technologies. Non-classical transistor structures such as the ...
ICCD
2007
IEEE
14 years 1 months ago
2007
IEEE
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-scale circuits. In this paper, it is observed that in spite of improved device charact...
ISVLSI
2006
IEEE
13 years 10 months ago
2006
IEEE
FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous work have studied the performan...
DAC
2006
ACM
14 years 5 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
ICCAD
2005
IEEE
13 years 10 months ago
2005
IEEE
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic d...