2 search results - page 1 / 1 » Fundamental Bounds on Power Reduction during Data-Retention ... |
ISCAS
2007
IEEE
13 years 10 months ago
2007
IEEE
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
ISQED
2008
IEEE
13 years 10 months ago
2008
IEEE
SRAM leakage power dominates the total power of low duty-cycle applications, e.g., sensor nodes. Accordingly, leakage power reduction during data-retention in SRAM standby is ofte...