4 search results - page 1 / 1 » Leakage Controlled Read Stable Static Random Access Memories |
JCP
2008
13 years 4 months ago
2008
Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a criti...
VLSID
2009
IEEE
14 years 4 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
ISCAS
2007
IEEE
13 years 10 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
VLSID
2010
IEEE
13 years 8 months ago
2010
IEEE
A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nanoCMOS static random access memory (SRAM) is presented. A 45nm single-end...