Lateral heat conduction between modules affects the temperature profile of a floorplan, affecting the leakage power of individual blocks which increasingly is becoming a larger ...
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
Transistor leakage is poised to become the dominant source of power dissipation in digital systems, and reconfigurable devices are not immune to this problem. Modern FPGAs already...
Leakage power consumption of current CMOS technology is already a great challenge. ITRS projects that leakage power consumption may come to dominate total chip power consumption as...
Jun-Cheol Park, Vincent John Mooney III, Philipp P...
We propose a methodology and power models for an accurate high-level power estimation of physically partitioned and power-gated SRAM arrays. The models offer accurate estimation o...
Minh Quang Do, Mindaugas Drazdziulis, Per Larsson-...