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ISCAS
1999
IEEE
129views Hardware» more  ISCAS 1999»
13 years 8 months ago
A tunable triode-MOSFET transconductor and its application to gm-C filters
A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor operating in triode region is settled by a regulation loop and a first-order lin...
Jader A. De Lima, C. Dualibe
SOCC
2008
IEEE
151views Education» more  SOCC 2008»
13 years 10 months ago
Failure analysis for ultra low power nano-CMOS SRAM under process variations
— Several design metrics have been used in the past to evaluate the SRAM cell stability. However, most of them fail to provide the exact stability figures as shown in this paper...
Jawar Singh, Jimson Mathew, Dhiraj K. Pradhan, Sar...
MTDT
2006
IEEE
154views Hardware» more  MTDT 2006»
13 years 9 months ago
SRAM Cell Current in Low Leakage Design
This paper highlights the cell current characterization of a low leakage 6T SRAM by adjusting the threshold voltages of the transistors in the memory array to reduce the standby p...
Ding-Ming Kwai, Ching-Hua Hsiao, Chung-Ping Kuo, C...
SOCC
2008
IEEE
167views Education» more  SOCC 2008»
13 years 10 months ago
65NM sub-threshold 11T-SRAM for ultra low voltage applications
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
Farshad Moradi, Dag T. Wisland, Snorre Aunet, Hami...