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DAC
2006
ACM
10 years 5 months ago
Modeling and analysis of circuit performance of ballistic CNFET
With the advent of carbon nanotube technology, evaluating circuit and system performance using these devices is becoming extremely important. In this paper, we propose a quasi-ana...
Bipul C. Paul, Shinobu Fujita, Masaki Okajima, Tho...
ICCAD
2003
IEEE
204views Hardware» more  ICCAD 2003»
10 years 8 months ago
Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation
Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators ...
Arijit Raychowdhury, Saibal Mukhopadhyay, Kaushik ...
DATE
2009
IEEE
140views Hardware» more  DATE 2009»
10 years 6 months ago
Imperfection-immune VLSI logic circuits using Carbon Nanotube Field Effect Transistors
Carbon Nanotube Field-Effect Transistors (CNFETs) show big promise as extensions to silicon-CMOS because: 1) Ideal CNFETs can provide significant energy and performance benefits o...
Subhasish Mitra, Jie Zhang, Nishant Patil, Hai Wei
ICCAD
2008
IEEE
103views Hardware» more  ICCAD 2008»
10 years 8 months ago
Graphene nanoribbon FETs: technology exploration and CAD
Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFET...
Kartik Mohanram, Jing Guo
DAC
2008
ACM
11 years 20 days ago
Analysis and implications of parasitic and screening effects on the high-frequency/RF performance of tunneling-carbon nanotube F
Intrinsic and parasitic capacitances play an important role in determining the high?frequency RF performance of devices. Recently, a new type of carbon nanotube field effect trans...
Chaitanya Kshirsagar, Mohamed N. El-Zeftawi, Kaust...
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