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TCAD
2010
106views more  TCAD 2010»
13 years 2 months ago
Modeling the Overshooting Effect for CMOS Inverter Delay Analysis in Nanometer Technologies
—With the scaling of complementary metal–oxide– semiconductor (CMOS) technology into the nanometer regime, the overshooting effect due to the input-to-output coupling capacit...
Zhangcai Huang, Atsushi Kurokawa, Masanori Hashimo...
ASPDAC
2007
ACM
101views Hardware» more  ASPDAC 2007»
13 years 8 months ago
Modeling the Overshooting Effect for CMOS Inverter in Nanometer Technologies
Zhangcai Huang, Hong Yu, Atsushi Kurokawa, Yasuaki...
GLVLSI
2006
IEEE
144views VLSI» more  GLVLSI 2006»
13 years 10 months ago
Crosstalk analysis in nanometer technologies
Process variations have become a key concern of circuit designers because of their significant, yet hard to predict impact on performance and signal integrity of VLSI circuits. St...
Shahin Nazarian, Ali Iranli, Massoud Pedram
ISLPED
2009
ACM
127views Hardware» more  ISLPED 2009»
13 years 11 months ago
Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic
In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45 nm node. We demonstrate by circuit simulation and analytical model...
David Bol, Dina Kamel, Denis Flandre, Jean-Didier ...
DAC
1996
ACM
13 years 8 months ago
Modeling the Effects of Temporal Proximity of Input Transitions on Gate Propagation Delay and Transition Time
: While delay modeling of gates with a single switching input has received considerable attention, the case of multiple inputs switching in close temporal proximity is just beginni...
V. Chandramouli, Karem A. Sakallah