In this paper challenges observed in 65nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra lo...
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Al...
A new circuit technique is proposed in this paper for simultaneously reducing the subthreshold and gate oxide leakage power in domino logic circuits. PMOS-only sleep transistors ar...
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
Farshad Moradi, Dag T. Wisland, Snorre Aunet, Hami...
With scaling of CMOS technologies, sub-threshold, gate and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together they account for more than 2...
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...