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» New subthreshold concepts in 65nm CMOS technology
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ISQED
2009
IEEE
126views Hardware» more  ISQED 2009»
13 years 11 months ago
New subthreshold concepts in 65nm CMOS technology
In this paper challenges observed in 65nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra lo...
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Al...
ISCAS
2006
IEEE
135views Hardware» more  ISCAS 2006»
13 years 10 months ago
Wide temperature spectrum low leakage dynamic circuit technique for sub-65nm CMOS technologies
A new circuit technique is proposed in this paper for simultaneously reducing the subthreshold and gate oxide leakage power in domino logic circuits. PMOS-only sleep transistors ar...
Volkan Kursun, Zhiyu Liu
SOCC
2008
IEEE
167views Education» more  SOCC 2008»
13 years 10 months ago
65NM sub-threshold 11T-SRAM for ultra low voltage applications
In this paper a new ultra low power SRAM cell is proposed. In the proposed SRAM topology, additional circuitry has been added to a standard 6T-SRAM cell to improve the static nois...
Farshad Moradi, Dag T. Wisland, Snorre Aunet, Hami...
VLSID
2007
IEEE
152views VLSI» more  VLSID 2007»
14 years 4 months ago
An Efficient Technique for Leakage Current Estimation in Sub 65nm Scaled CMOS Circuits Based on Loading Effect
With scaling of CMOS technologies, sub-threshold, gate and reverse biased junction band-to-band-tunneling leakage have increased dramatically. Together they account for more than 2...
Ashesh Rastogi, Wei Chen, Alodeep Sanyal, Sandip K...
ASPDAC
2007
ACM
95views Hardware» more  ASPDAC 2007»
13 years 8 months ago
Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...