78 search results - page 1 / 16 » Performance modeling of resonant tunneling based RAMs |
ISCAS
2003
IEEE
13 years 9 months ago
2003
IEEE
Tunneling based random-access memories (TRAM’s) have recently garnered a great amount of interests among the memory designers due to their intrinsic merits such as reduced power...
ISQED
2008
IEEE
13 years 10 months ago
2008
IEEE
We proposed a combined magnetic and circuit level technique to explore the design methodology of SpinTorque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tunneling ju...
GLVLSI
2003
IEEE
13 years 9 months ago
2003
IEEE
It is likely that it will become increasingly difficult to manufacture the complex, heterogeneous logic structures that characterise current reconfigurable logic systems. As a res...
EMSOFT
2007
Springer
13 years 10 months ago
2007
Springer
Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magnetoresistive RAM) has characteristics of both non-volatile storage and random ac...
ISLPED
2009
ACM
13 years 10 months ago
2009
ACM
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...