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ISQED
2006
IEEE
109views Hardware» more  ISQED 2006»
13 years 10 months ago
Dual-K Versus Dual-T Technique for Gate Leakage Reduction : A Comparative Perspective
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...