5 search results - page 1 / 1 » Reduction of Direct Tunneling Power Dissipation during Behav... |
ISVLSI
2005
IEEE
13 years 10 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
VLSID
2006
IEEE
14 years 4 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
DATE
2006
IEEE
13 years 10 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
ISCAS
2006
IEEE
13 years 10 months ago
2006
IEEE
In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simulta...