5 search results - page 1 / 1 » Standard cell characterization considering lithography induc... |
DAC
2006
ACM
14 years 5 months ago
2006
ACM
As VLSI technology scales toward 65nm and beyond, both timing and power performance of integrated circuits are increasingly affected by process variations. In practice, people oft...
ISQED
2007
IEEE
13 years 10 months ago
2007
IEEE
Historically, design margin and defects have been viewed as different topics, one part of design and the other part of test. Shrinking process geometries are making the two part o...
ICCD
2007
IEEE
14 years 1 months ago
2007
IEEE
As the VLSI technology marches beyond 65 and 45nm process technologies, variation in gate length has a direct impact on leakage and performance of CMOS transistors. Due to sub-wav...
ISQED
2011
IEEE
12 years 8 months ago
2011
IEEE
The extent to which the 6T SRAM bit cell can be perpetuated through continued scaling is of enormous technological and economic importance. Understanding the growing limitations i...
ASPDAC
2007
ACM
13 years 8 months ago
2007
ACM
An accurate model is presented to calculate the short circuit energy dissipation of logic cells. The short circuit current is highly dependent on the input and output voltage valu...