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» Standby Leakage Power Reduction Technique for Nanoscale CMOS...
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JCSC
2002
129views more  JCSC 2002»
10 years 1 months ago
Leakage Current Reduction in VLSI Systems
There is a growing need to analyze and optimize the stand-by component of power in digital circuits designed for portable and battery-powered applications. Since these circuits re...
David Blaauw, Steven M. Martin, Trevor N. Mudge, K...
GLVLSI
2007
IEEE
134views VLSI» more  GLVLSI 2007»
10 years 7 months ago
Sleep transistor distribution in row-based MTCMOS designs
- The Multi-Threshold CMOS (MTCMOS) technology has become a popular technique for standby power reduction. This technology utilizes high-Vth sleep transistors to reduce subthreshol...
Chanseok Hwang, Peng Rong, Massoud Pedram
ISCAS
2007
IEEE
94views Hardware» more  ISCAS 2007»
10 years 7 months ago
Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....
DAC
2002
ACM
11 years 2 months ago
Dynamic and leakage power reduction in MTCMOS circuits using an automated efficient gate clustering technique
Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power diss...
Mohab Anis, Mohamed Mahmoud, Mohamed I. Elmasry, S...
ISCAS
2005
IEEE
103views Hardware» more  ISCAS 2005»
10 years 7 months ago
Why area might reduce power in nanoscale CMOS
— In this paper we explore the relationship between power and area. By exploiting parallelism (and thus using more area) one can reduce the switching frequency allowing a reducti...
Paul Beckett, S. C. Goldstein
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