25 search results - page 3 / 5 » Standby Leakage Power Reduction Technique for Nanoscale CMOS... |
CASES
2006
ACM
13 years 10 months ago
2006
ACM
Rising interest in the applications of wireless sensor networks has spurred research in the development of computing systems for lowthroughput, energy-constrained applications. Un...
DATE
2006
IEEE
13 years 10 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
GLVLSI
2007
IEEE
13 years 10 months ago
2007
IEEE
Leakage power dissipation is one of the most critical factors for the overall current dissipation and future designs. However, design techniques for the reduction of leakage power...
ASPDAC
2006
ACM
13 years 10 months ago
2006
ACM
- One of the critical issues in MTCMOS design is how to estimate a circuit delay quickly. In this paper, we propose a delay modeling and static timing analysis (STA) methodology ta...
VLSID
2006
IEEE
14 years 4 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...