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DAC
2008
ACM
10 years 27 days ago
Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness
The threshold voltage (Vth) of a nanoscale transistor is severely affected by random dopant fluctuations and line-edge roughness. The analysis of these effects usually requires at...
Yun Ye, Frank Liu, Sani R. Nassif, Yu Cao
DAC
2007
ACM
10 years 27 days ago
Width-dependent Statistical Leakage Modeling for Random Dopant Induced Threshold Voltage Shift
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional...
Jie Gu, Sachin S. Sapatnekar, Chris H. Kim
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