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» Storage coding for wear leveling in flash memories
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TIT
2010
124views Education» more  TIT 2010»
12 years 11 months ago
Storage coding for wear leveling in flash memories
NAND flash memories are currently the most widely used type of flash memories. In a NAND flash memory, although a cell block consists of many pages, to rewrite one page, the whole ...
Anxiao Jiang, Robert Mateescu, Eitan Yaakobi, Jeho...
DAC
2007
ACM
14 years 5 months ago
Endurance Enhancement of Flash-Memory Storage, Systems: An Efficient Static Wear Leveling Design
This work is motivated by the strong demand of reliability enhancement over flash memory. Our objective is to improve the endurance of flash memory with limited overhead and witho...
Yuan-Hao Chang, Jen-Wei Hsieh, Tei-Wei Kuo
TVLSI
2010
12 years 11 months ago
Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding
By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density ad...
Shu Li, Tong Zhang
CCECE
2011
IEEE
12 years 4 months ago
A flash resident file system for embedded sensor networks
Many embedded devices, especially those designed for environmental sensor logging, have extremely limited RAM, often less than several kilobytes. Logged data is stored on flash m...
Scott Fazackerley, Ramon Lawrence
CORR
2010
Springer
128views Education» more  CORR 2010»
13 years 1 months ago
Trajectory Codes for Flash Memory
Abstract--Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the store...
Anxiao Jiang, Michael Langberg, Moshe Schwartz, Je...